Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom

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概要

• 論文の詳細を見る

• A technology is presented that will allow the fabrication of thin III-V compound semiconductor layers of low dislocation density on silicon substrates. GaAs and InP wafers were successfully bonded to bare and oxidized silicon substrates in an experimental setup that produces a microcleanroom for bubble-free bonding in any envirornment. The bonding strength was found to be comparable to that of Si on oxidized Si and sufficient to subsequent grinding and polishing of the bonded wafers.

• 社団法人応用物理学会の論文
• 1989-12-20

著者

• Goesele U

  School Of Engineering Duke University

• Gosele U.

  School Of Engineering Duke University

• LEHMANN V.

  School of Engineering, Duke University

• MITANI K.

  School of Engineering, Duke University

• STENGL R.

  School of Engineering, Duke University

• MII T.

  School of Engineering, Duke University

• Stengl R

  School Of Engineering Duke University:(present Address)siemens Ag Research Laboratories

• Lehmann V.

  School Of Engineering Duke University

• Mii T.

  School Of Engineering Duke University

• Mitani K.

  School Of Engineering Duke University:(present Address)shin-etsu Handotai R&d

関連論文

• Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom
• Gold Gettering in Directly Bonded Silicon Wafers
• Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment : Semiconductors and Semiconductor Devices

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