Tunneling Structures Fabricated by Silicon Wafer Direct Bonding

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概要

• 論文の詳細を見る

• Tunneling diodes with highly doped and abrupt pn-junctions, and p+nn+ diodes were fabricated by bonding 4 inch silicon wafers at room temperature. After low temperature annealing (300–800°C) the electrical properties of the bonding interface could be changed by applying high currents up to 500 A/cm2. For tunneling diodes stressed with high current densities negative resistance effects have been obtained. The p+nn+ diodes with bonded n+ and p+ emitters showed S-shaped current switching observed in p-n-I-M structures. It is shown that due to the presence of an oxide at the bonding interface the current is limited in bonded pn-junctions.

• 1989-12-20

著者

• Yang W.-s.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Stengl R.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Ahn K.-y.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Gosele U.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Yang W.-S.

  Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, North Carolina 27706, USA

• Mii T.

  Department of Electrical Engineering, School of Engineering, Duke University, Durham, North Carolina 27706, USA

• Ahn K.-Y.

  Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, North Carolina 27706, USA

関連論文

• Gold Gettering in Directly Bonded Silicon Wafers
• Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment : Semiconductors and Semiconductor Devices
• Tunneling Structures Fabricated by Silicon Wafer Direct Bonding

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