Development of High Efficiency Epitaxial Silicon Solar Cells : I-3: SILICON SOLAR CELLS (III)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-06-01
著者
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Ishihara Shin-ichiro
Department Of Electronics Nagoya Institute Of Technology
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Usami Akira
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SUGANO Masahide
Department of Electronics, Nagoya Institute of Technology
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Sugano Masahide
Department Of Electronics Nagoya Institute Of Technology
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USAMI Akira
Department of Applied Chemistry, Seikei University
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- Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique
- Relationship between Raman Spectra and Crystallinity of CdS Films Grown by Cathodic Electrodeposition
- Contactless Measurement of Photoinduced Carrier Lifetime and Injection Level in Silicon Wafer Using Additional Eddy Current
- Current DLTS with a Bipolar Rectangular Weighting Function for MOS Structures
- Current DLTS with a Bipolar Rectangular Weighting Function for a Neutron-Irradiated P-Type Si
- Evaluation of Minority-Carrier Traps at the Interface in MOS Structures by Optical DLTS
- Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy
- Transient Drain Current Measurements of Neutron-Irradiated Silicon p-Channel Junction Field-Effect Transistors
- Junction and Bulk Region Characteristics of the Laser Annealed Si Solar Cells : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
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