Carbon Contamination in Synchrotron-Radiation-Stimulated Al Deposition Using a Low Temperature Condensed Layer of Dimethyl Aluminum Hydride
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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TSUSAKA Yoshiyuki
Department of Physics, School of Science, Nagoya University
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URISU Tsuneo
Department of Vacuum UV Photoscience, Institute for Molecular Science
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Urisu Tsuneo
Department Of Vacuum Uv Photoscience Institute For Molecular Science
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IMAIZUMI Yoshiaki
The Graduate University for Advanced Studies
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IBUKI Takashi
Faculty of Science, Himeji Institute of Technology
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Ibuki Toshio
Faculty Of Science Himeji Institute Of Technology
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Tsusaka Yoshiyuki
Department Of Vacuum Uv Photoscience Institute For Molecular Science
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IBUKI Toshio
Department of Vacuum UV Photoscience, Institute for Molecular Science
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Imaizumi Yoshiaki
The Graduate University For Advanced Studies Institute For Molecular Science
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- Annealing and Synchrotron Radiation Irradiation Effects on Hydrogen Terminated Si(100) Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
- Molecular Orientation and Photochemical Reaction of Organoaluminum Compounds Investigated by Buried Metal Layer Infrared Reflection Absorption Spectroscopy
- 500-nm-Resolution 10 keV X-Ray Imaging Transmission Microscope with Tantalum Phase Zone Plates
- Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H-terminated Si(100) Surface
- 230 nm Resolution 10 keV X-Ray Imaging Transmission Microscope with Parallel Beam Illumination(Instrumentation, Measurement, and Fabrication Technology)
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- Highly Excited States of Cyanogen Halides in the Extreme Vacuum Ultraviolet Region
- Photoabsorption Spectra of Si(CH_3O)_4, Si(CH_3O)_2(C_6H_5)_2, Si(C_2H_5O)_4, Ti(i-C_3H_7O), and BCl_3 in the Region of 6-9.6 eV
- Carbon Contamination in Synchrotron-Radiation-Stimulated Al Deposition Using a Low Temperature Condensed Layer of Dimethyl Aluminum Hydride
- Intitial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
- Structure and Deposition Mechanism of 10-Undecenoic Acid Self-Assembled Layers on H-Si (111) Surfaces Studied by Atomic Force Microscopy and Fourier-Transform Infrared