Annealing and Synchrotron Radiation Irradiation Effects on Hydrogen Terminated Si(100) Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Yoshigoe Akitaka
The Graduate University For Advanced Studies Institute For Molecular Science
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Yoshigoe Akitaka
The Graduate University For Advanced Studies Institute For Molecular Science:(present Address) Surfa
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Gheyas Syed
Department Of Vacuum Uv Photoscience Institute For Molecular Science:(present Address) Department Of
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Noda H
The Graduate University For Advanced Studies Institute For Molecular Science
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Noda Hideyuki
The Graduate University For Advanced Studies Institute For Molecular Science
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URISU Tsuneo
Department of Vacuum UV Photoscience, Institute for Molecular Science
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HIRANO Shinya
The Graduate University for Advanced Studies, Institute for Molecular Science
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Hirano Shinya
The Graduate University For Advanced Studies Institute For Molecular Science
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Gheyas Syed
Department Of Electronic Engineering Faculty Of Science And Engineering Saga University
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Urisu Tsuneo
Department Of Vacuum Uv Photoscience Institute For Molecular Science
関連論文
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- Annealing and Synchrotron Radiation Irradiation Effects on Hydrogen Terminated Si(100) Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
- Synchrotron-Radiation-Assisted Surface Processes of Diethylzinc on GaAs(100)
- Synchrotron-Radiation-Excited Growth of ZnTe by Alternating Gas Supply Using Metalorganic Sources
- Molecular Orientation and Photochemical Reaction of Organoaluminum Compounds Investigated by Buried Metal Layer Infrared Reflection Absorption Spectroscopy
- Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H-terminated Si(100) Surface
- Synchrotron Radiation Irradiation Effects for SiH_n on Si(100) Surface in the Synchrotron Radiation Stimulated Si Gas Source Molecular Beam Epitaxy
- Carbon Contamination in Synchrotron-Radiation-Stimulated Al Deposition Using a Low Temperature Condensed Layer of Dimethyl Aluminum Hydride
- Intitial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy
- Structure and Deposition Mechanism of 10-Undecenoic Acid Self-Assembled Layers on H-Si (111) Surfaces Studied by Atomic Force Microscopy and Fourier-Transform Infrared