The Role of Stacked Insulating Layers on Thin-Film Electroluminescent Devices
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概要
- 論文の詳細を見る
The charge versus applied voltage (Q-V) characteristics of a thin-film electroluminescent (TFEL) device with an Al/SiO_2/Ta_2O_5/ZnS/Ta_2O_5/ITO/Glass structure are investigated. The results for a stacked insulating layer TFEL device are summarized as follows. The maximum charge (Q_<max>) of the TFEL device is determined by the highest Q_<max> of insulators. The SiO_2 insulating layer used in this study shows that the dielectric avalanche breakdown and the electric field of the film is clamped in the region above its own breakdown field strength under current conditions limited by the Ta_2O_5 insulating layers. The TFEL device shows a hexagonal Q-V loop in high electric fields.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Ohwaki Junichi
Ntt Electrical Communications Laboratories
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Ohwaki Junichi
Ntt Telecommunications Energy Laboratories
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KOZAWAGUCHI Haruki
NTT Electrical Communications Laboratories
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TSUJIYAMA Bunjiro
NTT Electrical Communications Laboratories
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Yamauchi Noriyoshi
Ntt Electrical Communications Laboratories
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Yamauchi Noriyoshi
Ntt Electrical Communication Laboratories
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Kozawaguchi H
Ntt Electrical Communications Laboratories
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