An Application of the Dry Liftoff Method by Molybdenum Oxide Sublimation to CMOS Isolation

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概要

• 論文の詳細を見る

• A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO_2 film is delineated by removing the Mo pattern underneath the SiO_2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

• 社団法人応用物理学会の論文
• 1986-07-20

著者

• Yamauchi Noriyoshi

  Ntt Electrical Communications Laboratories

• Yamauchi Noriyoshi

  Ntt Electrical Communication Laboratories

関連論文

• An Application of the Dry Liftoff Method by Molybdenum Oxide Sublimation to CMOS Isolation
• The Role of Stacked Insulating Layers on Thin-Film Electroluminescent Devices
• A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator

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