ZnS:Mu Electroluminescent Device Prepared by Metal-Organic Chemical Vapor Deposition

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概要

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• AC thin-film ZnS:Mn electroluminescent devices were fabricated by metal-organic chemical vapor deposition, using dimethylzinc and H_2S as source gases and tri-carbonyl-methyl-cyclopentadienyl-Mn as the dopant gas. Tri-carbonyl-methyl-cyclopentadienyl-Mn was decomposed by heating at 580℃ at the entrance of the reactor, enabling the ZnS film to be doped homogeneously with the optimum concentration of Mn. The brightness of metal/insulator/semiconductor electroluminescent devices made with the resulting ZnS:Mn film was more than 5000 cd/m^2 (5 kHz, 130 V), while metal/insulator/semiconductor/insulator electroluminescent devices had a brightness of more than 6000 cd/m^2 (5 kHz, 160 V) and exhibited hysteresis in their brightness-voltage characteristics.

• 社団法人応用物理学会の論文
• 1986-05-20

著者

• HIRABAYASHI Katsuhiko

  NTT Electrical Communications Laboratories

• KOZAWAGUCHI Haruki

  NTT Electrical Communications Laboratories

関連論文

• F/Tb Ratio Dependence of the Photoluminescent and Electroluminescent Characteristics in MOCVD-Prepared ZnS:TbF_x Green-Emitting Electroluminescent Devices : Optical Properties of Condensed Matter
• MOCVD Preparation of Polycrystalline ZnS Films with Pronounced Columnar Grains
• Color Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition
• The Role of Stacked Insulating Layers on Thin-Film Electroluminescent Devices
• Bright Blue Electroluminescenee in SrS:CeCl_3 Thin-Films
• ZnS:Mu Electroluminescent Device Prepared by Metal-Organic Chemical Vapor Deposition
• Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition

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