Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition

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概要

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• AC thin film ZnS:Mn electroluminescent devices prepared by metal organic chemical vapor deposition have been found to exhibit a larger and more stable memory effect than devices prepared by EB-evaporation. The memory margin is about 15% of the threshold voltage for a device having an Mn concentration of 0.8 wt%. The memory margin is relatively stable. The results show that except for the first 300 hours, the brightness-voltage characteristic exhibits almost the same hysteresis shape during 2000 hours of aging at a constant brightness of 500 cd/m^2, using a 5 kHz sinusoidal wave.

• 社団法人応用物理学会の論文
• 1986-05-20

著者

• HIRABAYASHI Katsuhiko

  NTT Electrical Communications Laboratories

• KOZAWAGUCHI Haruki

  NTT Electrical Communications Laboratories

関連論文

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• Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition

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