Etch Pit Pattern of GaAs Crystals Made by Light Irradiated Electrolytic Etching

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概要

• 論文の詳細を見る

• A light-irradiated electrolytic etching technique was developed for GaAs crystals. This technique, which employs a chemical echant consisting of AgNO_3, CrO_3, HF and H_2O, realize clear etch pit patterns in a thinly etched layer of GaAs. A square pattern and a triangular pattern appear on the {100} plane and {111} As plane, respectively. Etching depth is about one tenth that of traditional electrolytic etching without light. This makes application to accurate epitaxial layer evaluation possible. The patterns obtained by this method are shown to be dislocation pits by comparison with X-ray topography patterns. The clear patterns obtained can be made even when the etchant is at room temperature. The results open the way for practical evaluation of thin epitaxial layers.

• 社団法人応用物理学会の論文
• 1979-09-05

著者

• Takahashi Kunihiko

  Central Research Laboratory Hitachi Lid.

• TAKAHASHI Kunihiko

  Central Research Laboratory, Hitachi Ltd.

関連論文

• Electron Concentration Changes in High Purity GaAs Grown by Liquid Phase Epitaxy
• Structural Evaluation of GaAs Crystals from Etch Pits
• Etch Pit Pattern of GaAs Crystals Made by Light Irradiated Electrolytic Etching
• Some Considerations Regarding the Performance of High-Pressure Vapor Discharge Lamps
• Starting Voltage of High-Pressure Sodium Lamps
• An Evaluation of Epitaxially Grown GaAs with Buffer Layer by Hall Measurements
• Comparison of Etch Pits and V-I Characteristics in n-GaAs {100} Crystals

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