An Evaluation of Epitaxially Grown GaAs with Buffer Layer by Hall Measurements

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概要

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• Four kinds of mesa-type Hall measurement samples are fabricated from crystals obtained by liquid phase epitaxial growth of n-GaAs on semi-insulating GaAs substrates. A p-type buffer layer with a low carrier concentration is inserted between the active layer and the substrate in order to produce Hall measurement samples with high sensitivity and stability by mitigating effects from abnormal interfaces. The electron concentrations of the resulting Hall measurement samples have a spread of less than ±10%, so high mobility measurement samples can be fabricated. The variation of the Hall voltage with temperature is 10^<-5>℃^<-1>. The variation of the input resistance with temperature is 3×10^<-3>℃^<-1>. Finally, effects of stress to the measurement samples are described.

• 社団法人応用物理学会の論文
• 1981-10-05

著者

• Takahashi Kunihiko

  Central Research Laboratory Hitachi Lid.

• TAKAHASHI Kunihiko

  Central Research Laboratory, Hitachi Ltd.

関連論文

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• Some Considerations Regarding the Performance of High-Pressure Vapor Discharge Lamps
• Starting Voltage of High-Pressure Sodium Lamps
• An Evaluation of Epitaxially Grown GaAs with Buffer Layer by Hall Measurements
• Comparison of Etch Pits and V-I Characteristics in n-GaAs {100} Crystals

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