Structural Evaluation of GaAs Crystals from Etch Pits

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概要

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• GaAs crystals are evaluated from the etch pits which appear on the crystal surfaces as a result of chemical etching. They are evaluated by the etch pit density caused by AB etchant on the {100} plane. Three types of {100} etch pit patterns-point etch pits, line etch pits, and elliptical etch pits - occur with various dopants and rods.

• 社団法人応用物理学会の論文
• 1980-10-05

著者

• Takahashi Kunihiko

  Central Research Laboratory Hitachi Ltd.

• Takahashi Kunihiko

  Central Research Laboratory Hitachi Lid.

関連論文

• Electron Concentration Changes in High Purity GaAs Grown by Liquid Phase Epitaxy
• Structural Evaluation of GaAs Crystals from Etch Pits
• Etch Pit Pattern of GaAs Crystals Made by Light Irradiated Electrolytic Etching
• Some Considerations Regarding the Performance of High-Pressure Vapor Discharge Lamps
• Starting Voltage of High-Pressure Sodium Lamps
• An Evaluation of Epitaxially Grown GaAs with Buffer Layer by Hall Measurements
• Comparison of Etch Pits and V-I Characteristics in n-GaAs {100} Crystals

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