Electron Concentration Changes in High Purity GaAs Grown by Liquid Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-05

著者

• Takahashi Kunihiko

  Central Research Laboratory Hitachi Lid.

関連論文

• Electron Concentration Changes in High Purity GaAs Grown by Liquid Phase Epitaxy
• Structural Evaluation of GaAs Crystals from Etch Pits
• Etch Pit Pattern of GaAs Crystals Made by Light Irradiated Electrolytic Etching
• Some Considerations Regarding the Performance of High-Pressure Vapor Discharge Lamps
• Starting Voltage of High-Pressure Sodium Lamps
• An Evaluation of Epitaxially Grown GaAs with Buffer Layer by Hall Measurements
• Comparison of Etch Pits and V-I Characteristics in n-GaAs {100} Crystals

スポンサーリンク