Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems
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概要
- 論文の詳細を見る
The electronic properties of MNOS diodes consisting of vapor deposited Si_3N_4 and thermally grown SiO_2 films are studied. The diodes exhibiting injection or ion drift type hysteresis are prepared using n- or p-type substrate. It is found that ion drift type MNOS diodes utilizing n-type substrate exhibits a new type of C-V and I-V characteristics, while the other kinds of diodes exhibit similar characteristics as those of MNS diodes. This new type of characteristics are interpreted in terms of single carrier (electron) transport while the other ones are interpreted in terms of electron and hole transport throughout the diodes. Combining these findings with the general concept of charge transport and storage (CTS) model, a two carrier CTS model which gives a qualitative but unified understanding of shift characteristics of flat band voltage as well as C-V and I-V curves associated with MNOS diodes is proposed.
- 社団法人応用物理学会の論文
- 1972-04-05
著者
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Ohta Kuniichi
Ic Division Nippon Electric Company
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Kobayashi Keizo
Ic Diision
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Kobayashi Keizo
Ic Division Nippon Electric Company
関連論文
- Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems
- Electronic Processes in MNOS System (II) Transitions between the Types of C-V, I-V and G-V Characteristics
- High Speed 1k-bit Static RAM Using DSA MOST's : A-3: MOS DEVICE AND LIST (3)
- Substrate Current due to Impact Ionization in MOS-FET
- Memory Performance of MOS Transistors with SiO_2 Films Prepared by SiH_4-H_2O System
- Electrical Properties of MAOS Structures as Revealed by Conductance Technique
- Broadening of Landau Levels in Two-Dimensional Electron Gas : Its Effect on Surface Capacitance