Electronic Processes in MNOS System (II) Transitions between the Types of C-V, I-V and G-V Characteristics

概要

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Using MNOS diodes with a wide range of device parameters such as the thickness of SiO_2 films, conductivities of Si_3N_4 films, and conductivities and carrier types of Si substrates, C-V_G and V_<FB>-V_G curves were measured as a function of the measurement temperature, heat treatment and maximum applied voltage. Two types of C-V_G curves and the transition from one type to the other were observed. It was found that a correspondence between the type of C-V_G curve and the direction of the shift of V_<FB>, observed in the grown samples such as those described in a previous paper persisted even after the transition from the one to the other types of C-V_G curves had occurred. In addition, two types of G-V_G curves were also observed. These results were qualitatively explained by a model described before.
社団法人応用物理学会の論文
1973-06-05