High Speed 1k-bit Static RAM Using DSA MOST's : A-3: MOS DEVICE AND LIST (3)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-03-01

著者

• Kobayashi Keizo

  Ic Diision

• SAITOH Manzoh

  IC Division

• MURAO Yukinobu

  IC Division

• TAKAHASHI Kazukiyo

  Central Research Laboratories, Nippon Electric Company Ltd.

• Takahashi Kazukiyo

  Central Research Laboratories Nippon Electric Company Ltd.

関連論文

• Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems
• Electronic Processes in MNOS System (II) Transitions between the Types of C-V, I-V and G-V Characteristics
• High Speed 1k-bit Static RAM Using DSA MOST's : A-3: MOS DEVICE AND LIST (3)
• Substrate Current due to Impact Ionization in MOS-FET
• Memory Performance of MOS Transistors with SiO_2 Films Prepared by SiH_4-H_2O System

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