Memory Performance of MOS Transistors with SiO_2 Films Prepared by SiH_4-H_2O System

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概要

• 論文の詳細を見る

• Memory characteristics of MOS transistors and MOS diodes with SiO_2 films deposited by using the SiH_4-H_2O system were evaluated by measuring the I-V characteristics, the C-V hysteresis, the shift in threshold voltage (△V_T) and memory retention capability. These characteristics were compared with those of MNOS transistors. The results indicate that MO_IO_<II>O_<III>S structure (O_I: SiO_2 film deposited using the SiH_4-NO_2 system, O_<II>: SiO_2 film deposited using the SiH_4-H_2O system, O_<III>: thermally grown SiO_2 film) has a good retention capability, and MO_<II>O_<III>S transistor is more likely to show the shift characteristics of ion drift type than MNO_<III>S transistor of the same dimensions. From the various experimental results, it is concluded that memory performance of MO_<II>O_<III>S transistor exhibiting the shift characteristics of ion drift type is better than that of MNO_<III>S transistor.

• 社団法人応用物理学会の論文
• 1973-05-05

著者

• Kobayashi Keizo

  Ic Diision

• Kobayashi Keizo

  Ic Division Nippon Electric Company Ltd.

• HANETA Yuichi

  IC Division, Nippon Electric Company, Ltd.

• Haneta Yuichi

  Ic Division Nippon Electric Company Ltd.

関連論文

• Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems
• Electronic Processes in MNOS System (II) Transitions between the Types of C-V, I-V and G-V Characteristics
• High Speed 1k-bit Static RAM Using DSA MOST's : A-3: MOS DEVICE AND LIST (3)
• Substrate Current due to Impact Ionization in MOS-FET
• Memory Performance of MOS Transistors with SiO_2 Films Prepared by SiH_4-H_2O System
• Effect of Thin Oxide Film on Breakdown Voltage of Silicon N^+P Junction

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