Effect of Thin Oxide Film on Breakdown Voltage of Silicon N^+P Junction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-02-05
著者
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Matsumoto Kazushige
Ic Division Nippon Electric Company Ltd.
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Haneta Yuichi
Ic Division Nippon Electric Company Ltd.
関連論文
- Memory Performance of MOS Transistors with SiO_2 Films Prepared by SiH_4-H_2O System
- Effect of Thin Oxide Film on Breakdown Voltage of Silicon N^+P Junction