Barrier Height of Titanium Silicide Schottky Barrier Diodes

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概要

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• Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi_2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.

• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Kikuchi Akira

  Central Research Laboratory Hitachi Ltd.

関連論文

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• Effects of Sputter Etching on Aluminum-Silicon Schottky Barrier Diode Characteristics
• Lowering of Initial Anodizing Current Density due to Thin Aluminum Oxide Film on Evaporated Aluminum
• Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces

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