Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces

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概要

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• Equilibrium energy and the misfit-dislocation density of transition-metal silicide (tmSi)-Si systems are calculated as a function of the lattice mismatch (Δa) between tmSi and Si. For same thick tmSi films, the total energy of a type-B tmSi-Si system is found to be always lower than that of a type-A tmSi-Si system, especially when the tmSi films are thick. This is in good agreement with the experimental results indicating that the type-B film is a thermodynamically more favorable atomic structure at the NiSi_2- and CoSi_2-Si interfaces. The misfit-dislocation density increases with increasing Δa, whereas the equilibrium energy of type-B tmSi-Si is represented by a curve with a maximum near Δa=2%.

• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Kikuchi Akira

  Central Research Laboratory Hitachi Ltd.

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• Effects of Sputter Etching on Aluminum-Silicon Schottky Barrier Diode Characteristics
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• Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces

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