Effects of Sputter Etching on Aluminum-Silicon Schottky Barrier Diode Characteristics

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概要

• 論文の詳細を見る

• Schottky barrier diodes are fabricated on silicon surfaces whose impurity concentration is controlled by ion implantation techniques. The barriers are produced by Al-Si film sputtering. The forward characteristics of the sputter etched Schottky barrier diode show a forward current higher than the predicted value for low voltages and a lower value at high voltages. Electron spectroscopy for chemical analysis reveals that the silicon surface is contaminated with oxidized aluminum and molybdenum and with entrapped argon atoms during the sputter etching process.

• 社団法人応用物理学会の論文
• 1983-09-20

著者

• Kikuchi Akira

  Central Research Laboratory Hitachi Ltd.

• IWATA Seiichi

  Central Research Laboratory, Hitachi, Ltd.

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