Effects of Phosphorus Implantation and Post Annealing on Palladium Silicide Schottky Barrier Diode Characteristics

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概要

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• Schottky barrier diodes were fabricated on silicon surfaces whose impurity concentrations were controlled by ion implantation of phosphorus. The barriers were produced by Pd_2Si. The forward voltages of these Schottky barrier diodes showed far greater lowering than predicted for implanted doses of 5×10^<13>cm^<-2> and higher. This was due to the reduction in the effective barrier height caused by accumulation of the phosphorus atoms at the Pd_2Si-Si interface during the formation of the Pd_2Si. This lowering is enhanced by post annealing after the formation of the Pd_2Si.

• 社団法人応用物理学会の論文
• 1984-10-20

著者

• Kikuchi Akira

  Central Research Laboratory Hitachi Ltd.

関連論文

• Barrier Height of Titanium Silicide Schottky Barrier Diodes
• Effects of Phosphorus Implantation and Post Annealing on Palladium Silicide Schottky Barrier Diode Characteristics
• Effects of Sputter Etching on Aluminum-Silicon Schottky Barrier Diode Characteristics
• Lowering of Initial Anodizing Current Density due to Thin Aluminum Oxide Film on Evaporated Aluminum
• Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces

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