Lowering of Initial Anodizing Current Density due to Thin Aluminum Oxide Film on Evaporated Aluminum

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概要

• 論文の詳細を見る

• Initial current densities under constant voltage anodic oxidation are measured to estimate aluminum oxide film thickness on aluminum. It is shown that the logarithm of initial current density ratio with and without a thin aluminum oxide on aluminum is proportional to the logarithm of the exposure time to dry air. Auger electron spectroscopy measurements show that the surface of aluminum exposed to dry air is covered with a thicker aluminum oxide film than an aluminum surface just after aluminum oxide etching by an aqueous 5% sulfamic acid.

• 社団法人応用物理学会の論文
• 1985-01-20

著者

• Kikuchi Akira

  Central Research Laboratory Hitachi Ltd.

• KIKUCHI Akira

  Central Research Laboratory, Hitachi Ltd.

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• Effects of Sputter Etching on Aluminum-Silicon Schottky Barrier Diode Characteristics
• Lowering of Initial Anodizing Current Density due to Thin Aluminum Oxide Film on Evaporated Aluminum
• Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces

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