A New MOS Phototransistor Operating in a Non-Destructive Readout Mode

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概要

• 論文の詳細を見る

• A new MOS phototransistor with high optical gain and non-destructive readout operation is proposed as a photosensor in an imaging device. The principle of this device is a conduction mechanism whereby an incident light changes the surface potential under the MOS gate and the electron current flowing in a buried channel is modulated by the surface potential. The device has a saturation exposure value of 0.1 lx・s, saturation output voltage of 500 mV at V_<DD>=2 V, the dynamic range of 50 dB with no signal processing and non-destructive readout operation.

• 社団法人応用物理学会の論文
• 1985-05-20

著者

• MATSUMOTO Kazuya

  Olympus Optical Co., Ltd.

• Nakamura Tsutomu

  Olympus Optical Co. Ltd.

• Yusa Atsushi

  Olympus Optical Co. Ltd.

• Nagai Shohei

  Olympus Optical Co. Ltd.

• Nagai Shohei

  Olympus Optical Co. Ltd

• Matsumoto Kazuya

  Olympus Optical Co. Ltd.

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• Carrier Reset Operation in Charge Modulation Device
• Applications of the Marechal Method of Aberration Balancing : I. Case of Reflectors
• A New MOS Phototransistor Operating in a Non-Destructive Readout Mode
• Applications of the Marechal Method of Aberration Balancing. : III. Extension to Seventh- and Ninth-Order Aberrations
• Applications of the Marechal Method of Aberration Balancing. : II. Case of Single Thin Lenses

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