Low-Energy Electron Energy-loss Spectra Associated with Reconstructed Structure on Si(111) Surface
スポンサーリンク
概要
- 論文の詳細を見る
Low-energy electron energy-loss spectra from the Si(111) surface were obtained under a surface wave resonance condition under which the wave vector of diffracted electrons is parallel to a row of the 1/7-order superlattice rods in 7 × 7 structure: A peak related to surface dangling bond at 1.5 eV in the energy-loss value ?E, and a peak due to the excitation of surface plasmon at ?E=8.5 eV are enhanced at each height. Surface plasmon peak shifts to 10.5 eV when the condition is not satisfied. When the surface changes from a 7 × 7 structure to a 1 × 1, the decrease in these peak heights is also observed.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
-
Shigeta Yukichi
Department Of Physics Yokohama City University
-
Maki Kunisuke
Department Of Physics & Graduate School Of Integrated Science Yokohama City University
-
SHIGETA Yukichi
Department of Physics & Graduate School of Integrated Science, Yokohama City University
関連論文
- Change in Molecular Orientation during Thin Film Growth by Evaporation of Copolymer of Vinylidene Fluoride (80%) and Tetrafluoroethylene (20%)
- Stress in Vacuum Deposited Films of Silver
- Infrared Reflection Absorption in Vacuum-Deposited Polyethylene Film with Rough Surface
- Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction
- Thickness Dependence of Infrared Reflection Absorption in Vacuum-Deposited Thin Film of Polyvinylidene Fluoride
- Auger Electron Spectroscopy in Au Particles Deposited on Air-Cleaved Face (001) of MgO Crystal
- Spectrum of Low Energy Electrons from Cleavage Face (001) of MgO Crystal Deposited by Ag Film Composed of Small Particles
- Surfaces of Vacuum-Deposited Silicon Oxide Films Studied by Anger Electron Spectroscopy
- Low-Energy Electron Energy-loss Spectra Associated with Reconstructed Structure on Si(111) Surface
- Low-Energy Electron Energy-Loss Peak Due to Excitation of the Surface State Associated with Dangling Bonds on Si(001)-2×1 Surface : Surfaces, Interfaces and Films
- Thickness-Dependence of Electrical Resistivity in Antimony Films Deposited in Oil-Pumped and Ion-Pumped Evaporators
- Crystallization Thickness of Amorphous Sb Film on GeO_x Film Substrate in a Vacuum of 10^ Torr
- Thickness-Dependence of Electrical Resistivity in Amorphous and Crystalline Ge Films