High Pressure High Temperature Steam Oxidation Poly Buffer LOCOS (HP-HTPBL) Field Isolation Process for Reduced Encroachment and Low Stress

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概要

• 論文の詳細を見る

• The characterization of High Pressure-High Temperature Poly Buffer LOCOS (HP-HTPBL) isolation for 0.2 μm design rules Non Volatile Memories is presented. Reduced bird's beak and improved charge to breakdown (Q_<bd>) are obtained by combining High Pressure (25 atmospheres) 1100℃ steam oxidation and 30℃/min ramp-up and 12℃/min ramp-down temperature rates. The fast temperature ramp-up inhibits the crystallization of the amorphous silicon (a-Si) buffer layer into large grain and limits the grain boundaries oxygen diffusion during the field oxidation process. Low warpage variations are obtained on 200 mm diameter wafers by the reduction of the cumulative oxidation induced stress.

• 社団法人応用物理学会の論文
• 1996-09-15

著者

• Deleonibus Simon

  Lei(cea) Depth De Microelectronique

• Leroux Charles

  Leti(cea) Departement De Microelectronique

• Emami Alan

  Gasonics International

• HEITZMANN Michel

  LETI(CEA), Dept de Microelectronique

• MARTIN Francois

  LETI(CEA), Dept de Microelectronique

• DELEONIBUS Simon

  LETI(CEA) Departement de Microelectronique

• KIM Sang

  GASONICS International

• FLORIN Brigitte

  LETI(CEA) Departement de Microelectronique

• Martin Francois

  Leti(cea) Dept De Microelectronique

• Heitzmann Michel

  Leti(cea) Dept De Microelectronique

関連論文

• Differential Body Effect Analysis and Optimization of the LArge Tilt Implanted Sloped Shallow Trench Isolation Process (LATI-STI)
• High Pressure High Temperature Steam Oxidation Poly Buffer LOCOS (HP-HTPBL) Field Isolation Process for Reduced Encroachment and Low Stress
• Dry O_2 High Pressure Field Oxidation for 0.25μm Isolation Technology

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