Differential Body Effect Analysis and Optimization of the LArge Tilt Implanted Sloped Shallow Trench Isolation Process (LATI-STI)

概要

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The optimization of a LArge Tilt Implanted Sloped shallow Trench Isolation (LATI-STI) process for Non Volatile Memories is presented. The process uses 70°sloped and large tilt angle (up to 55°) implanted trench sidewalls, combined with a single step Chemical-Mechanical Polishing (CMP) planarization. A new method, so-called differential body effect method, enables very accurate and statistical electrical analysis of the subthreshold humped transistors characteristics under strong body bias (V_B) values: compared to a 90°sloped trenches case larger process margins are obtained with the LATI-STI scheme. 15 V holding isolation is demonstrated for 0.45 μm finished spacings between diffusions.
社団法人応用物理学会の論文
1996-08-01