Effects of Tungsten Polycidation on the Hot-Carrier Degradation in Buried-Channel LDD p-MOSFET's

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概要

• 論文の詳細を見る

• Hot-carrier immunity of LDD buried-channel p-MOSFET's is severely degraded following tungsten polycidation of device gate and incorporation of F in the oxide, in contrast to the reliability enhancement commonly observed for n-MOSFET's. Possible mechanisms involving enhanced trapping at F-related oxide bulk traps and reduced field-induced detrapping rate are discussed. The reduction in hot-carrier reliability of WSi_x gate p-MOSFET's may raise concern over the use of WF_6-based tungsten polycide technology in deep submicrometer CMOS circuits.

• 社団法人応用物理学会の論文
• 1996-12-01

著者

• Ling C.

  Department Of Electrical Engineering National University Of Singapore

• Ling C.h.

  Department Of Electrical Engineering National University Of Singapore

• ANG D.

  Department of Electrical Engineering, National University of Singapore

• Ang D.

  Department Of Electrical Engineering National University Of Singapore

• Ang D.S.

  Department of Electrical Engineering, National University of Singapore

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• Some Characteristics of the Zero-Temperature-Coefficient Capacitance of an MOS Capacitor in Accumulation
• Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements
• Effects of Tungsten Polycidation on the Hot-Carrier Degradation in Buried-Channel LDD p-MOSFET's

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