Effect of Oxygen Incorporation of BHF Etch Rate of Plasma-Enhanced CVD Silicon Nitride Films Prepared in the Temperature Range 50-300℃
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Kwok C
National Univ. Singapore Singapore Sgp
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LING C.H.
Department of Electrical Engineering, National University of Singapore
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KWOK C.Y.
Department of Electrical Engineering, National University of Singapore
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PRASAD K.
Department of Electrical Engineering, National University of Singapore
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Prasad K.
Department Of Biology And Program In Molecular Plant Biology Colorado State University
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Prasad K
National Univ. Singapore Singapore Sgp
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Ling C.h.
Department Of Electrical Engineering National University Of Singapore
関連論文
- Effect of Oxygen Incorporation of BHF Etch Rate of Plasma-Enhanced CVD Silicon Nitride Films Prepared in the Temperature Range 50-300℃
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