Some Characteristics of the Zero-Temperature-Coefficient Capacitance of an MOS Capacitor in Accumulation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-05-15

著者

• Ling C

  Department Of Electrical And Computer Engineering National University Of Singapore

• LING C.H.

  Department of Electrical Engineering, National University of Singapore

• Ling C.h.

  Department Of Electrical Engineering National University Of Singapore

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• Effect of Oxygen Incorporation of BHF Etch Rate of Plasma-Enhanced CVD Silicon Nitride Films Prepared in the Temperature Range 50-300℃
• Some Characteristics of the Zero-Temperature-Coefficient Capacitance of an MOS Capacitor in Accumulation
• Effects of Tungsten Polycidation on the Hot-Carrier Degradation in Buried-Channel LDD p-MOSFET's

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