X-Ray Characterization of Lapped Surfaces of Si and Ge Single Crystals at 33.17 keV
スポンサーリンク
概要
- 論文の詳細を見る
X-ray characterization of lapped surfaces of Si and Ge monochromator crystals was performed at 33.17 keV. From comparison of the integrated intensity and FWHM (full width at half-maximum) of those crystals versus the particle size of lapping abrasives, Si crystal lapped with abrasive of #3000 showed a very high reflectivity of 78% and a reasonably narrow FWHM of 12.4 arcsec. This lapped crystal provides ten times the X-ray integrated intensity of the etched one and retains energy resolution of 33 eV (ΔE/E=9.9×10^<-4>), which meets the requirements for imaging in intravenous coronary angiography utilizing an enlarged monochromatic beam from an asymmetrical cut St crystal surface.
- 社団法人応用物理学会の論文
- 1991-12-01
著者
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兵藤 一行
筑波大学 放射線
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HYODO Kazuyuki
Photon Factory, National Laboratory for High Energy Physics
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ANDO MASAMI
Photon Factory, National Laboratory for High Energy Physics
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SHIWAKU Hideaki
Synchrotron Radiation Research Center, Kansai Research Establishment, JAERI
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Ando Masami
Photon Factory National Laboratory For High Energy Physics (kek)
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Sugiyama H
Institute Of Materials Structure Science High Energy Accelerator Research Organization Kek
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Hyodo Kazuyuki
Photon Factory National Laboratory For High Energy Physics
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Shiwaku Hideaki
Photon Factory National Laboratory For High Energy Physics (kek)
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SHIWAKU Hideaki
Department of Synchrotron Radiation Science, The Graduate University for Advanced Studies
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Ando Masami
Photon Factory (pf) Institute Of Materials Structure Science High Energy Accelerator Research Organi
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兵藤 一行
高エネルギー加速器研究機構・放射光研究施設
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