Raman Study of Ring Structures of Chemical Vapor Deposited SiO_2 Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-08-15
著者
-
Nakano T
National Inst. Advanced Interdisciplinary Res. Ibaraki Jpn
-
Mura Naomi
Lsi Division Kawasaki Steel Corporation
-
NAKANO Tadashi
LSI Division, Kawasaki Steel Corporation
-
TSUZUMITANI Akihiko
LSI Division, Kawasaki Steel Corporation
-
Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
-
Tsuzumitani Akihiko
Lsi Division Kawasaki Steel Corporation
関連論文
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films
- Improvement of Gap-Filling Property of O_3-tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment
- Relationship between Water Diffusivity of Dielectric Films and Accelerated Hot Carrier Degradation Caused by Water
- Water Diffusivity of Dielectric Films Evaluated with Use of D_2O
- Raman Study of Ring Structures of Chemical Vapor Deposited SiO_2 Thin Films
- TEM Observations of the Grain Boundaries in a Semiconducting Barium Titanate Thick Film
- High-Density and High-Carrier-to-Noise-Ratio Optical Disk Mastering : High Density Recording
- High-Density and High-Carrier-to-Noise-Ratio Optical Disk Mastering