Superconducting Properties and Phase Analysis of Nb-Si Thin Films Produced by Sputtering
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概要
- 論文の詳細を見る
Nb-Si films were deposited on Nb_<.84>Si_<.16>, Ti_3Au and W_3Re films with an A15 structure by sputtering. The films with double layers were analyzed using Auger electron spectroscopy. Phase analyses of the sputtered Nb-Si films were carried out by X-ray diffraction studies. The A15 Nb_<.78>Si_<.22> and Nb_<.75>Si_<.25> films were grown epitaxially on Nb_<.84>Si_<.16> and W_3Re substrate films. The superconducting transition temperatures of these epitaxial films were found to range between 5 and 9 K.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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OHSHIMA Shigetoshi
Department of Gastroenterology, Akita University School of Medicine
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WAKIYAMA Tokuo
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Ohshima Shigetoshi
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Ohshima Shigetoshi
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Wakiyama Tokuo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Wakiyama Tokuo
Department Of Electrical Engineering Faculty Of Engineering Tohoku University
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Shiba Takashi
Department Of Electronic Engineering Faculty Of Engineering Tohoku University:hitachi Ltd.
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KAWANOBE Tadashi
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Kawanobe Tadashi
Department Of Electronic Engineering Faculty Of Engineering Tohoku University:hitachi Cable Ltd.
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