Ferroelectric Domain Structure of X-Ray-Irradiated TGS
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概要
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Domain patterns on the b-plane of X-ray-irradiated TGS crystals were examined by the rub etch method. The domain structure is not changed by the irradiation in the ferroelectric phase, and is reproduced after heat treatment. Crystals irradiated in the paraelectric phase show extremely fine domain patterns. The rate of evolution of the domain structure after heat treatment is reduced by the irradiation. These effects are explained by assuming that the microscopic defects formed by irradiation have polarity. The polarity of a defect is determined by the domain orientation at the defect site, and determines the direction of the bias field resulting from the defect.
- 社団法人応用物理学会の論文
- 1986-01-20
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