Computer Simulation of Range and Damage Distributions of He ions in SiC
スポンサーリンク
概要
- 論文の詳細を見る
The exrerimental projected ranges of various heavy ions in an amorphous Si target in the energy region where the nuclear stopping dominates are compared with calculations using the computer simulation program SASAMAL with the Lenz-Jensen, Moliere, Thomas-Fermi and Kalbitzer-Oetzmann (KO) screening parameters. In most cases,the best agreement was obtained with the KO screening parameters. The projected range distributions of He ions implanted in an SiC target were calculated using SASAMAL with KO screening parameters. The agreement between the SASAMAL(KO) results and our experimental data was satisfactory when the electronic stopping parameter k=1.3 k_<NS> was used. The energy and the depth distributions of the primary knock-on atoms and the depth distributions of the recoil enersy density with various values of the displacement energy E_d were also calculated using SASAMAL(KO) for He ions in SiC.
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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MIYAGAWA Yoshiko
Government Industrial Research Institute
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MIYAGAWA Soji
Government Industrial Research Institute
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Miyagawa Y
Multifunctional Material Science Department National Industrial Research Institute Of Nagoya
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Ato Y
Government Industrial Research Inst. Nagoya
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Ato Yasuro
Government Industrial Research Institute Nagoya
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Ato Yasuro
Goverment Industrial Research Institute Nagoya
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