Implantation Profiles of Low-Energy Helium in Silicon Carbide

概要

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The projected range profiles of helium implanted in silicon carbide were measured for energies between 1 keV and 20 keV using a method based on a combination of ion sputtering and gas release. The method is capable of producing helium depth profiles with a depth resolution of less than 100 Å, and a sensitivity to implantation fluences of 2×10^<16> ions/cm^2 and below, where bubble formation is unlikely. The results were compared with theoretical predictions by Monte Carlo calculations, and good agreement was obtained by using values of the electronic stopping powers equal to 1.3 times the stopping constants given in the semiempirical tabulation by Northcliffe and Schilling. The effects of target temperature on the helium range profiles were also measured at 600℃, and the results were found to be associated with the grain-boundary diffusion of helium.
社団法人応用物理学会の論文
1984-10-20