Electrorn-Beam Study of Nanometer Performances of the SAL 601 Chemically Amplified Resist

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概要

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• The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100 nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350 nm thick resist with exposure latitude of 0.4 nm/μC/cm^2 at 50 kV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.

• 社団法人応用物理学会の論文
• 1998-08-15

著者

• GENTILI Massimo

  Istituto di Elettronica dello Stato Solido-CNR

• FABRIZIO Enzo

  Istituto di Elettronica dello Stato Solido-CNR-Via Cineto Romano

• Fabrizio Enzo

  Istituto Di Elettronica Dello Stato Solido-cnr

• Fabrizio Enzo

  Istituto Di Elettronica Dello Stato Solido-cnr Via Cineto Romano

• Gentili Massimo

  Istituto Di Electronica Dello Stato Solido-cnr

• Gentili Massimo

  Istituto Di Elettronica Dello Stato Solido-cnr Via Cineto Romano

• GERARDINO Annamaria

  Istituto di Elettronica dello Stato Solido-CNR, Via Cineto Romano

• Gerardino A

  Iess Cnr Roma Ita

関連論文

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• Microphotonic Devices Fabricated by Silicon Micromachining Techniques
• Fabrication of High-Resolution Fresnel Zone Plates by a Single Layer Resist Process
• Fabrication of 5 nm Resolution Electrodes for Molecular Devices by Means of Electron Beam Lithography
• Electrorn-Beam Study of Nanometer Performances of the SAL 601 Chemically Amplified Resist

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