Relationship between Dissolution Inhibitors and Dissolution Rate of Resist in Chemically Amplified Three-Component Positive Resist
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-08-15
著者
-
HORIBE Hideo
Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation
-
KUBOTA Shigeru
Materials and Electronic Devices Lab, .Mitsunishi Electric Corporation
-
Kubota Shigeru
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
-
Kumada Teruhiko
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
-
KIMURA Yoshika
ULSI Laboratory, Mitsubishi Electric Corporation
-
Kimura Yoshika
Ulsi Laboratory Mitsubishi Electric Corporation
-
Kimura Yoshika
Ulsi Research Laboratory Mitsubishi Electric Corporation
-
Horibe Hideo
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
関連論文
- Organotin-Containing Resists (TMAR) for X-Ray Lithography : Resist Material and Process
- Organotin-Containing Resists (TMAR) for X-Ray Lithography
- Electron Beam Direct Writing Techniques for the Development of Sub-Quarter-Micron Devices
- Molecular Design of Dissolution Inhibitor in Chemical Amplification Resist System by Molecular Orbital Method : Transparency and Reactivities with "Protons"
- Relationship between Dissolution Inhibitors and Dissolution Rate of Resist in Chemically Amplified Three-Component Positive Resist
- Improvement of Dry Etching Resistance of Resists by Deep UV Cure
- Organic Molecular Beam Deposition of α-Sexithienyl
- Immersion-Specific Defects of High-Receding-Angle Topcoat