Photolithographic Pattern Transformation by Backside Exposure in a-Si:H Thin-Film Transistor Liquid Crystal Displays
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概要
- 論文の詳細を見る
Resist pattern transformation by backside exposure, which is a key process for a self-alignment technique is investigated. The light intensity and a-Si:H thickness markedly affect the pattern transformation, while the effect of gate insulator thickness is small. Numerical simulations based on Fresnel diffraction showed fairly good agreement with the experimental results.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Ikeda Mitsushi
Toshiba Corporation R&d Center
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Akiyama Masahiko
Display Materials And Devices Laboratory Corporate Research & Development Center Toshiba Corp.
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Uchikoga Shuichi
Toshiba Corporation, R&D Center
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Hiromasu Yasunobu
IBM Japan, LCD Product Development No. 1
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Onozuka Yutaka
Toshiba Corporation, R&D Center
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Koizumi Takashi
Toshiba Corporation, R&D Center
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Akiyama Masahiko
Toshiba Corporation, R&D Center
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Suzuki Kouji
Toshiba Corporation, R&D Center
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Koizumi Takashi
Toshiba Corporation R&d Center
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Onozuka Yutaka
Display Materials And Devices Laboratory Corporate Research & Development Center Toshiba Corp.
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Uchikoga Shuichi
Toshiba Corporation R&d Center
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Suzuki Kouji
Display Materials And Devices Laboratory Corporate Research & Development Center Toshiba Corp.
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Hiromasu Yasunobu
Ibm Japan Lcd Product Development No. 1
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- Photolithographic Pattern Transformation by Backside Exposure in a-Si:H Thin-Film Transistor Liquid Crystal Displays