Semi-epitaxial bcc Ta Growth on Metal Nitride(Surfaces, Interfaces, and Films)

概要

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The crystal structure change of sputtered Ta metal according to the nonmetal underlayer film was studied. The bcc-structure Ta was grown on TaN_x, NbN_x and bcc Mo underlayer films, whereas tetragonal-structure Ta was grown on glass, Ta_2O_5 and some metals. The crystal structure of Ta varied from tetragonal to bcc according to the N composition of the TaN_x and NbN_x underlayer films. The bcc Ta growth on TaN_x was explained in terms of crystal structure compatibility of the Ta lattice arrangement between TaN_x and bcc Ta, and tetragonal Ta growth on Ta_2O_5 film could be explained by partial Ta lattice matching between Ta_2O_5 and Ta crystals. Bcc Ta on the TaN_x film gave a low resistivity of 25μΩcm, in contrast to that of conventional tetragonal Ta of 180μΩcm. The resistivity of Ta anodic oxide was increased by five orders of magnitude by adding N compared to that of conventional Ta anodic oxide. Low-resistivity bcc Ta on TaN_x and high-resistivity TaN anodic oxide are applied as gate bus lines of TFT-LCD.
社団法人応用物理学会の論文
2002-06-15