SiO_x/TaO_x Gate Insulator a-Si TFT for Liquid Crystal Displays

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-09-20

著者

• Ikeda Mitsushi

  Toshiba R & D Center

• Ikeda Mitsushi

  Toshiba Corporation R&d Center

• Aoki Toshio

  Tonen Corporation

• DOHJO Masayuki

  Toshiba R & D Center

• AOKI Toshio

  Toshiba R & D Center

• Dohjo Masayuki

  Toshiba R & D Center

関連論文

• Numerical Analysis of Underwater Acoustic Lens Using Wide-Angle Parabolic Equation Method
• Measurement of Copper Drift in Methylsilsesquiazane-Methylsilsesquioxane Dielectric Films
• Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films
• SiO_x/TaO_x Gate Insulator a-Si TFT for Liquid Crystal Displays
• Notes on Compressible Gasket and Bridgman-Anvil Type High Pressure Apparatus
• Characteristics of Link-Type Cubic Anvil, High Pressure-High Temperature Apparatus
• Photolithographic Pattern Transformation by Backside Exposure in a-Si:H Thin-Film Transistor Liquid Crystal Displays

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