InN Thin-Film Growth Using N_2, NH_3 and N_2-He RF Plasmas (<Special Issue> Plasma Processing)

概要

論文の詳細を見る
InN thin films are prepared by reactive evaporation and the applicability of various rf plasmas such as N_2, NH_3 and N_2-He mixtures is investigated. Many indium droplets appear in the films when NH_3 plasma is used. On the other hand, the number of droplets is greatly decreased and c-axis-oriented InN films are obtained by addition of N_2 to NH_3 plasma or by using pure N_2 plasma. In case of films prepared using N_2-He plasma, although the c-axis-oriented InN films are obtained, some damage appears in the films. In addition to these differences originating from the kind of gas used, the surface morphology and the crystallinity of the prepared films deteriorate as the gas pressure increases. These are improved by lowering the reaction ratio between indium and nitrogen in the vapor phase.
社団法人応用物理学会の論文
1994-07-30