Nondestructive Internal Observation in Electron-Acoustic Microscopy Using Metal-Oxide-Semiconductor LSI Chip

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概要

• 論文の詳細を見る

• A metal-oxide-semiconductor (MOS)-LSI was observed by electron-acoustic microscopy (EAM) under various operating conditions of acceleration voltage (HV). The results are as follows. (l) When HV=20 kV, arrays of contact holes which were covered with both an Al (thickness: 0.5 μm) and an SiO_2 (0.6 μm) layer could be observed.(2) However they could not be observed when HV = 15 kV. (3) The observable depth of EAM is controllable using HV as a parameter. (4) The adjustment of the irradiation power of the electron beam should make it possible to achieve nondestructive internal observation of MOS-LSI specimens.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Kobayashi Mutsuo

  Mitsubishi Electric Engineering Co. Ltd.

• Takenoshita Hiroshi

  Faculty Of Education Nagasaki University

関連論文

• Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Chip Using Electron-Acoustic Microscopy
• Nondestructive Internal Observation in Electron-Acoustic Microscopy Using Metal-Oxide-Semiconductor LSI Chip
• Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Designed by 0.8μm Rule
• Comparative Study of Scanning Electron Microscopy and Electron-Acoustic Microscopy Images(Semiconductors)
• Observation of Oxidation-Induced Stacking Faults by Electron-Acoustic Microscopy

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