Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Chip Using Electron-Acoustic Microscopy

スポンサーリンク

概要

• 論文の詳細を見る

• Observation of a metal-oxide-semiconductor (MOS) LSI as a specimen was carried out by electron-acoustic microscopy (EAM) under various operating conditions of acceleration voltage (HV) as a parameter. The results are as follows. (1) The adjustment of the irradiation power of the electron beam should make it possible to achieve nondestructive internal observation of MOS-LSI specimens with ceramic packages. (2) EAM imaging was observed as a flat plane at HV=14kV. (3) When HV=19kV, both contact holes (0.8×0.8μm^2) and via holes (0.8×0.8μm^2) could be observed. (4) When HV=15, 17 and 19kV, depths (tx) of the specimen observable by EAM were estimated as about 0.8, 1.1 and 1.5μm, respectively. (5) tx corresponded to approximately 40% of the electron range of an excited electron beam as a function of HV.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Kobayashi Mutsuo

  Mitsubishi Electric Engineering Co. Ltd.

関連論文

• Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Chip Using Electron-Acoustic Microscopy
• Nondestructive Internal Observation in Electron-Acoustic Microscopy Using Metal-Oxide-Semiconductor LSI Chip

スポンサーリンク