Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Designed by 0.8μm Rule

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概要

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• A metal-oxide-semiconductor (MOS)-LSI chip was designed by the 0.8μm rule, and a passivated film on the chip was etched off while keeping the chip mounted on a ceramic package. The acoustic signal generated by irradiation of a chopped electron beam was picked up by a piezoelectric detector (PZT element) attached to the back of the package. The results of observation by electron-acoustic microscopy (EAM) are as follows : (a) the observable depth (t_x) was proportional to the electron range (R_e) ; (b)t_x shifted to a shallower side (about 50% of R_e) compared to the case of bipolar transistors ; (c) contact holes (0.8μm^2) were distinctly observed at HV=19kV ; and (d) the resolution of our EAM was estimated to be about 0.4μm at a chopping frequency of the electron beam of 1MHz and an acceleration voltage of 18-19kV.

• 社団法人応用物理学会の論文
• 2000-09-15

著者

• Takenoshita Hiroshi

  Faculty Of Education Nagasaki University

関連論文

• Nondestructive Internal Observation in Electron-Acoustic Microscopy Using Metal-Oxide-Semiconductor LSI Chip
• Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Designed by 0.8μm Rule
• Comparative Study of Scanning Electron Microscopy and Electron-Acoustic Microscopy Images(Semiconductors)
• Observation of Oxidation-Induced Stacking Faults by Electron-Acoustic Microscopy

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