Observation of Oxidation-Induced Stacking Faults by Electron-Acoustic Microscopy

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概要

• 論文の詳細を見る

• A high-power npn Tr-chip (5×5×0.2 mm^3) fabricated by high-temperature heat treatments on a dislocation free Si (111) wafer was investigated using electron-acoustic microscopy (EAM). Part of the specimen was anglelapped (3°) to partially expose the emitter and base layers, and the mechanically damaged layer was removed by chemical polishing with CP-4A. From the scanning electron microscopy and EAM images of the same site, right triangles with each side measuring about 30 μm in length, arranged inn the <101> direction, were observed at the selected area. These images are oxidation-induced stacking faults (OSF) olcserved for the first time by EAM. These right triangles were distributed within the specimen and OSF existed not only on the specimen surface but also at depths of about 6 μm from it.

• 社団法人応用物理学会の論文
• 1995-05-30

著者

• Takenoshita Hiroshi

  Faculty Of Education Nagasaki University

• Takenoshita Hiroshi

  Faculty of Education, Nagasaki University

関連論文

• Nondestructive Internal Observation in Electron-Acoustic Microscopy Using Metal-Oxide-Semiconductor LSI Chip
• Nondestructive Internal Observation of Metal-Oxide-Semiconductor LSI Designed by 0.8μm Rule
• Comparative Study of Scanning Electron Microscopy and Electron-Acoustic Microscopy Images(Semiconductors)
• Observation of Oxidation-Induced Stacking Faults by Electron-Acoustic Microscopy

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