Effect of Film Resistance on Characteristics of High-T_c Multilayer Junctions
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概要
- 論文の詳細を見る
The effect of film resistance on high-T_c tunnel and proximity-effect multilayer junction characteristics is investigated in detail. The calculation based on the four-probe method is presented. It is shown that the measured tunnel resistance greatly deviates from the actual tunnel resistance when the film resistance is comparable to or larger than the latter. The semiconductive behavior with temperature above T_c, which is frequently observed in the measured tunnel resistance of high-T_c tunnel junctions, is attributed to the effect of film resistance, while the calculated actual tunnel resistance is found to be almost temperature-independent. The puzzling temperature dependence of junction resistance in SNS multilayers (S : HTSC, N : normal conductor), which exhibit a quasi-longrange proximity effect, is also explained by this calculation.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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Hayashida Hideaki
Institute Of Materials Science University Of Tsukuba
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Iguchi Ienari
Institute Of Materials Science University Of Tsukuba
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KUSUMORI Takeshi
Institute of Materials Science, University of Tsukuba
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Kusumori T
Institute Of Materials Science University Of Tsukuba
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Kusumori Takeshi
Institute Of Materials Science University Of Tsukuba
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