Evaluation of Radiation Darmage on Electrical Characteristics of SiO_2 due to Reactive Ion Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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Tsukamoto Akira
Kyoto Research Laboratory Matsushita Electronics Corporation
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MIZUSHIMA Kazuyoshi
Kyoto Research Laboratory, Matsushita Electronics Corporation
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HIDAKA Yoshiharu
Kyoto Research Laboratory, Matsushita Electronics Corporation
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OKADA Hiroyuki
Kyoto Research Laboratory, Matsushita Electronics Corporation
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TERAKAWA Sumio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Mizushima Koichi
Advanced Research Laboratory Toshiba R&d Center
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Terakawa Sumio
Kyoto Research Laboratory Matsushita Electronics Corporation
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Mizushima K
Toshiba Corp. Kawasaki Jpn
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Hidaka Yoshiharu
Kyoto Research Laboratory Matsushita Electronics Corporation
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Okada Hiroyuki
Kyoto Research Laboratory Matsushita Electronics Corporation
関連論文
- Effects of Oxygen Partial Pressure and Substrate Temperature on Crystalline Orientation in Y-Ba-Cu-O Films Prepared by Sputtering
- Structural Features and Superconducting Properties of As-Grown Y-Ba-Cu-O Films
- Evaluation of Radiation Darmage on Electrical Characteristics of SiO_2 due to Reactive Ion Etching
- Josephson Effect in YBa_2Cu_3O_7/Au-Ag/Pb Junctions
- A Novel Method for Superconducting Energy Gap Measurement
- Electric Properties of the Y-Ba-Cu-O/Ag Interface : Electrical Properties Condensed Matter
- Charge Buildup in Magnetized Process Plasma
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher : Etching and Deposition Technology
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
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