Triplet Exciton Trapping by Dislocations in Anthracene Crystals
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概要
- 論文の詳細を見る
Trapping of triplet excitons at dislocations, produced in anthracene crystals by plastic bending, was investigated by means of the temperature and the radius-of-curvature dependence of the triplet decay rate. As a result of the kinetic analysis, the trapping depth of 0.3 eV was obtained. The trapping rate constant was found to be dependent on the square root of the curvature, the dependence being related to the diffusion of triplet excitons in the ab plane and to the distance between dislocations. This phenomenon was re-analyzed by applying a one dimensional random-walk model.
- 社団法人応用物理学会の論文
- 1978-02-05
著者
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HAYAKAWA Sohachiro
Department of Applied Physics, Tokyo Institute of Technology
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Hayakawa Sohachiro
Department Of Applied Physics Faculty Of Science Tokyo Institute Of Technology
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SASAKI Akira
(Present address)Faculty of Engineering, Shizuoka University
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Sasaki Akira
(present Address)faculty Of Engineering Shizuoka University : Department Of Applied Physics Tokyo In
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