Thermally Stimulated Current of CdTe Doped with Zn
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概要
- 論文の詳細を見る
Three traps in p-type CdTe doped with Zn are found using the TSC (thermally stimulated current)method between 77 and 200 K. Their depths are estimated to be approximately 0.24, 0.25 and 0.40eV. The TSC peak for the 0.24 eV trap is considerably quenched by the infrared rays. A quantitative analysis of the processes for the 0.24eV trap is presented. It is proved that there are two different processes involved in the occupation of 0.40eV trap at 77K: one is a fast process and the other is slow. A model is proposed to explain qualitatively the complicated processes of the 0.40eV trap.
- 社団法人応用物理学会の論文
- 1978-05-05
著者
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Fuyuki Shigeru
Department Of Applied Physics Tokyo Institute Of Technology:on Leave From Kisarazu Technical College
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Hayakawa Sohachiro
Department Of Applied Physics Faculty Of Science Tokyo Institute Of Technology
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HYAKUTAKE Nobuo
Department of Applied Physics, Tokyo Institute of Technology
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Hyakutake Nobuo
Department Of Applied Physics Tokyo Institute Of Technology
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